收藏本站
NTD3813N
Power MOSFET
16 V, 51 A, Single N-Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Three Package Variations for Design Flexibility
? These are Pb-Free Devices
Applications
? DC-DC Converters
? High Side Switching
V (BR)DSS
16 V
http://onsemi.com
R DS(ON) MAX
8.75 m W @ 10 V
14.5 m W @ 4.5 V
D
I D MAX
51 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
16
Unit
V
G
Gate-to-Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
± 16
13.8
10.7
2.6
V
A
W
S
N-CHANNEL MOSFET
4
4
4
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
9.6
7.4
1.2
A
W
1 2
3
1
2 3
1
2
3
R q JA (Note 2)
CASE 369AA
CASE 369AC
CASE 369D
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
51
39
34.9
A
W
DPAK
(Bent Lead)
STYLE 2
3 IPAK IPAK
(Straight Lead) (Straight Lead
DPAK)
R q JC (Note 1)
MARKING DIAGRAMS
Pulsed Drain t p =10 m s
Current
Current Limited by Package
Operating Junction and Storage
T A = 25 ° C
T A = 25 ° C
I DM
I DmaxPkg
T J ,
114
35
-55 to
A
A
° C
4
Drain
& PIN ASSIGNMENTS
4
Drain
4
Drain
Temperature
T STG
+175
Source Current (Body Diode)
Drain to Source dV/dt
I S
dV/dt
29
6
A
V/ns
1 Drain 3
Gate Source Gate Drain Source
Single Pulse Drain-to-Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 10 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
15
260
mJ
° C
2
1 2 3
1 2 3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
3813N
G
= Year
= Work Week
= Device Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NTD3813N/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD3817NT4G MOSFET N-CH 16V 7.6A DPAK
NTD40N03R-1G MOSFET N-CH 25V 7.8A IPAK
NTD4302G MOSFET N-CH 30V 8.4A DPAK
NTD4804N-1G MOSFET N-CH 30V 14.5A IPAK
NTD4805N-1G MOSFET N-CH 30V 12.6A IPAK
NTD4806NT4G MOSFET N-CH 30V 11.3A DPAK
NTD4808N-1G MOSFET N-CH 30V 9.8A IPAK
NTD4809NHT4G MOSFET N-CH 30V 9A DPAK
相关代理商/技术参数
NTD3817N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD3817N-1G 功能描述:MOSFET N-CH 16V 7.6A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTD3817N-35G 功能描述:MOSFET N-CH 16V 7.6A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTD3817NT4G 功能描述:MOSFET N-CH 16V 7.6A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTD40 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD40N03R 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD40N03R-001 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD40N03R-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 45 Amps, 25 Volts